- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 382
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL QFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -10°C ~ 150°C (TJ) | - | - | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HV GATE DRIVER QFN3030-16 T&R 3K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8DFN
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HV GATE DRIVER W-DFN3030-10 T&R
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
LEVEL SHIFT JUNCTION ISO
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL INVERTING，LOW-SIDE
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL NON-INVERTING，LOW-S
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
3 AMP，DUAL，ONE INVERTING AND O
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
HVIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HVIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
100V，4A，HIGH FREQUENCY HALF-BR
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
