- Series:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Mounting Type:
-
- Input Type:
-
- Channel Type:
-
- Gate Type:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 9
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Mounting Type | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Mounting Type | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Power Integrations |
Enquête
|
- |
-
|
MOQ: 3 MPQ: 1
|
IGBT DVR CORE 3300V
|
- | SCALE-1 | 15V | -40°C ~ 85°C (TA) | - | - | - | IGBT,N-Channel,P-Channel MOSFET | - | - | - | 18A,18A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | - | Non-Inverting | Independent | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.3V,2.7V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 144 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A DIE
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | - | Non-Inverting | Independent | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 45 MPQ: 1
|
IC DRIVER HALF-BRIDGE 16-SOIC
|
Tube | - | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | Surface Mount | Non-Inverting | Synchronous | IGBT | 600V | - | - | - | ||||
Microsemi Corporation |
Enquête
|
- |
-
|
MOQ: 10 MPQ: 1
|
IC DRIVER DUAL IGBT ISO 2X2
|
Bulk | - | 14.5 V ~ 15.5 V | -40°C ~ 85°C (TA) | - | Non-Inverting | Independent | IGBT | 1200V | - | 0.8V,2V | 8A,8A | ||||
Power Integrations |
Enquête
|
- |
-
|
MOQ: 3 MPQ: 1
|
IGBT DVR CORE 2500V
|
- | SCALE-1 | 15V | -40°C ~ 85°C (TA) | - | - | - | IGBT,N-Channel,P-Channel MOSFET | - | - | - | 18A,18A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8DFN
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | - | Non-Inverting | Synchronous | N-Channel,P-Channel MOSFET | - | 16ns,11ns | 1V,2V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8DFN
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | - | Non-Inverting | Synchronous | N-Channel,P-Channel MOSFET | - | 16ns,11ns | 0.6V,3.3V | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET GATE DRIVER 8DFN
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 150°C (TJ) | - | Non-Inverting | Synchronous | N-Channel,P-Channel MOSFET | - | 16ns,11ns | 0.6V,3.3V | - |