- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 200
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
51,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
51,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.3A，1.4A | ||
|
|
|
Texas Instruments |
14,058
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.3A，1.4A | ||
|
|
|
Texas Instruments |
14,058
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8WSON
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 118V | 15ns，15ns | 0.8V，2.2V | 1.3A，1.4A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A |
