- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 215
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR SYNC 4.5A HS 8WSON
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Tape & Reel (TR) | - | 4 V ~ 6.85 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 17ns，12ns | - | 3A，4.5A | ||
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Texas Instruments |
3,745
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC 4.5A HS 8WSON
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Cut Tape (CT) | - | 4 V ~ 6.85 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 17ns，12ns | - | 3A，4.5A | ||
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Texas Instruments |
3,745
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC 4.5A HS 8WSON
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- | - | 4 V ~ 6.85 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 17ns，12ns | - | 3A，4.5A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8WSON
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Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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|
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Texas Instruments |
3,231
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8WSON
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Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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|
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Texas Instruments |
3,231
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8WSON
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- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 4500 MPQ: 1
|
IC GATE DVR HI/LO SIDE 8WSON
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
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Renesas Electronics America Inc. |
2,429
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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Renesas Electronics America Inc. |
1,135
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
324
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-TDFN
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Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
|
Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,870
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
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- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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Strip | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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Texas Instruments |
500
|
3 jours |
-
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MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A | ||
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|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | - | 5A，5A |
