Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 270
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
HIP2100EIBT
Renesas Electronics America Inc.
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 100V 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2101EIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tube - 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101EIBT
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tape & Reel (TR) - 9 V ~ 14 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP6601BECB
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6601BECB-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6601BECBZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6601BECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6601BECBZA
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6601BECBZA-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6603BECB
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC DRIVER MOSF SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6603BECB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSF SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6603BECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRIVER MOSF SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
HIP6603BECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSF SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns - -
ISL6612AECB
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612AECB-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612AEIB
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612AEIB-T
Renesas Electronics America Inc.
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612AEIBZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612AEIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612BECB
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 7 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A