- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
-
- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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Découvrez les produits 39
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Cut Tape (CT) | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Renesas Electronics America Inc. |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tube | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | ||
|
|
|
Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | - | ||
|
|
|
Maxim Integrated |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | - | ||
|
|
|
Renesas Electronics America Inc. |
709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8EPSOIC
|
Tube | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | ||
|
|
|
IXYS Integrated Circuits Division |
715
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-SO
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
82
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
2
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | ||
|
|
|
Maxim Integrated |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL NON INVERT
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tape & Reel (TR) | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | - |
