- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 270
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Monolithic Power Systems Inc. |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC GATE DRIVER
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Tube | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
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Monolithic Power Systems Inc. |
Enquête
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-
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MOQ: 100 MPQ: 1
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IC GATE DRIVER
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Tube | - | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER HALF BRDG 100V 8EPSOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER 24V 6A 8SOIC
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Tape & Reel (TR) | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 33ns，33ns (Max) | 0.8V，2.5V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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14A 8SOIC EXP MTL NON INV W/ENAB
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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14A 8LEAD SOIC EXP MTL INVERTING
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 2000 MPQ: 1
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14A 8SOIC EXP MTL NON INVERTING
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 5.0V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 5.0V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 5.0V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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14A 8SOIC EXP MTL NON INV W/ENAB
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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14A 8LEAD SOIC EXP MTL INVERTING
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A |
