Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 270
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ADP3625ARDZ-RL
Analog Devices Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3625ARDZ-RL
Analog Devices Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3634ARDZ
Analog Devices Inc.
6
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER DUAL 4A NONINV 8SOIC
Tube - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
MAX15013DASA+
Maxim Integrated
2
3 jours
-
MOQ: 1  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC-EP Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 0.8V,2V 2A,2A
MAX5063CASA+
Maxim Integrated
1
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 0.8V,2V 2A,2A
RT9624BZSP
Richtek USA Inc.
Enquête
-
-
MOQ: 30000  MPQ: 1
IC FET DVR 1CH SYNC BUCK SOP
Tape & Reel (TR) - 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOP-EP Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 25ns,12ns 0.7V,3.2V -
RT9624BZSP
Richtek USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK SOP
Cut Tape (CT) - 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOP-EP Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 25ns,12ns 0.7V,3.2V -
RT9624BZSP
Richtek USA Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FET DVR 1CH SYNC BUCK SOP
- - 4.5 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOP-EP Inverting,Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 25ns,12ns 0.7V,3.2V -
MP18021HN-A-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
IXDF602SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
2A 8SOIC EXP MTL DUAL IN/NON-INV
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI602SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
2A 8 SOIC EXP METAL DUAL INVERT
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDN602SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
2A 8SOIC EXP MTL DUAL NON INVERT
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDF602SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
2A 8SOIC EXP MTL DUAL IN/NON-INV
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI602SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
2A 8 SOIC EXP METAL DUAL INVERT
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
MP18024HN-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC-EP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 15ns,9ns 1V,2.4V -
IXDD609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,15ns 0.8V,3V 9A,9A
IXDI609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,15ns 0.8V,3V 9A,9A
ADP3634ARDZ-R7
Analog Devices Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR DUAL NONINVERT 4A 8SOIC
Tape & Reel (TR) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
IXDI609SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,15ns 0.8V,3V 9A,9A
IXDD604SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC-EP Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 9ns,8ns 0.8V,3V 4A,4A