- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 270
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Analog Devices Inc. |
182
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 4A NONINV 8SOIC
|
Tube | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Maxim Integrated |
2
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns,65ns | 0.8V,2V | 2A,2A | ||||
Maxim Integrated |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns,65ns | 0.8V,2V | 2A,2A | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 30000 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK SOP
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOP-EP | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK SOP
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOP-EP | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK SOP
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOP-EP | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 25ns,12ns | 0.7V,3.2V | - | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL NON INVERT
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 15ns,9ns | 1V,2.4V | - | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A |