- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 71
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 1500 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1500 MPQ: 1
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IC DVR HALF BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1500 MPQ: 1
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IC DVR HI/LO SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1500 MPQ: 1
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IC DVR HALF BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 175 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW DRIVER 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER HIGH/LOW DRIVER 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.7V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 225 MPQ: 1
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IC DRIVER HIGH/LOW DRIVER 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 45 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 200 MPQ: 1
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IC DRIVER HI/LOW 600V 1.9A 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Microchip Technology |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER MOSF DUAL HI/LOW 14DIP
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2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 14-DIP
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17V (Max) | -40°C ~ 150°C (TJ) | 14-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 14-DIP
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17V (Max) | -40°C ~ 150°C (TJ) | 14-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA |
