Fabricant:
Supplier Device Package:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Supplier Device Package Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
IX21844G
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF 600V 14DIP
10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP Synchronous Half-Bridge IGBT,N-Channel MOSFET 600V 23ns,14ns 1.4A,1.8A
MIC5016BN
Microchip Technology
Enquête
-
-
MOQ: 25  MPQ: 1
IC DRIVER MOSF DUAL HI/LOW 14DIP
2.75 V ~ 30 V -40°C ~ 150°C (TJ) 14-DIP Independent High-Side or Low-Side N-Channel MOSFET - - -
LT1160CN#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 250  MPQ: 1
IC PWR MOSFET DRIVER N-CH 14-DIP
10 V ~ 15 V 0°C ~ 125°C (TJ) 14-PDIP Independent Half-Bridge N-Channel MOSFET 60V 130ns,60ns 1.5A,1.5A
LT1160IN#PBF
Linear Technology/Analog Devices
Enquête
-
-
MOQ: 225  MPQ: 1
IC PWR MOSFET DRIVER N-CH 14-DIP
10 V ~ 15 V -40°C ~ 125°C (TJ) 14-PDIP Independent Half-Bridge N-Channel MOSFET 60V 130ns,60ns 1.5A,1.5A
MIC5016YN
Microchip Technology
Enquête
-
-
MOQ: 25  MPQ: 1
IC DRIVER MOSF DUAL HI/LOW 14DIP
2.75 V ~ 30 V -40°C ~ 150°C (TJ) 14-DIP Independent High-Side or Low-Side N-Channel MOSFET - - -