- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 5
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF 600V 14DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP | Synchronous | Half-Bridge | IGBT,N-Channel MOSFET | 600V | 23ns,14ns | 1.4A,1.8A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER MOSF DUAL HI/LOW 14DIP
|
2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP | Independent | High-Side or Low-Side | N-Channel MOSFET | - | - | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14-DIP
|
10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-PDIP | Independent | Half-Bridge | N-Channel MOSFET | 60V | 130ns,60ns | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14-DIP
|
10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-PDIP | Independent | Half-Bridge | N-Channel MOSFET | 60V | 130ns,60ns | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 25 MPQ: 1
|
IC DRIVER MOSF DUAL HI/LOW 14DIP
|
2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP | Independent | High-Side or Low-Side | N-Channel MOSFET | - | - | - |