- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 250
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 275 MPQ: 1
|
IC DVR HIGH/LOW SIDE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 330 MPQ: 1
|
IC DVR LOW SIDE/DUAL HI 14-SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 30ns,20ns | 0.8V,3.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V SO-14
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 14SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 30ns,20ns | 0.8V,3.5V | 500mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 4860 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 4860 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 9000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 275 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 220 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,12ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Vishay Siliconix |
Enquête
|
- |
-
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MOQ: 550 MPQ: 1
|
IC DRVR MOSF 1/2BRDG N-CH 14SOIC
|
Bulk | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 110ns,50ns | 1V,4V | 500mA,500mA | ||||
Vishay Siliconix |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRVR MOSF 1/2BRDG N-CH 14SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 40V | 110ns,50ns | 1V,4V | 500mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 216 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Linear Technology/Analog Devices |
679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14SOIC
|
Tube | - | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Linear Technology/Analog Devices |
737
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DRIVER N-CH 14SOIC
|
Tube | - | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns,60ns | 0.8V,2V | 1.5A,1.5A | ||||
Microchip Technology |
69
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 600V HALF 14SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 31ns,31ns | 0.8V,2.2V | 1A,1A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.6V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-14 T&R 2.5K
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 4.5A,4.5A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 4.5A,4.5A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SO | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.4A,1.8A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-14 T&R 2.5K
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 14-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.6V,2.5V | 290mA,600mA |