- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 34
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | High-Side | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.3V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
29,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
EiceDriver | 10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,37ns | 1.1V,1.7V | 1.8A,2.3A | ||||
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns,37ns | 1.1V,1.7V | 2.3A,2.3A | ||||
Infineon Technologies |
9,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Infineon Technologies |
6,862
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
4,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
5,765
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE 14-SOP
|
- | 10 V ~ 22 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
Infineon Technologies |
3,248
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT DVR 1200V DSO14
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | 250mA,500mA | ||||
Infineon Technologies |
2,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
6,974
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-SOIC
|
- | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns,50ns | 4.7V,9.3V | 180mA,260mA | ||||
ON Semiconductor |
2,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI/LO SIDE 14-SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
2,197
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HI/LO SIDE SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
STMicroelectronics |
1,947
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER IGBT/MOSFET 14-SOIC
|
- | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 14-SO | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | - | 130ns,75ns (Max) | 0.8V,4.2V | 1.5A,2.3A | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
- | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.2V,2.7V | 4A,4A | ||||
Infineon Technologies |
2,442
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
EiceDriver | 10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
2,366
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,30ns | 0.8V,2.2V | 220mA,480mA | ||||
Infineon Technologies |
2,459
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA |