Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 123
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR21362STR
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DRIVER 3PHASE 600V 28-SOIC
Tape & Reel (TR) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR2136STR
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DRIVER 3PHASE 600V 28-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tape & Reel (TR) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Cut Tape (CT) - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21362STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
- - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR2135SPBF
Infineon Technologies
Enquête
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-
MOQ: 75  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - 10 V ~ 20 V 125°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR21362SPBF
Infineon Technologies
Enquête
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-
MOQ: 100  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IXDD415SI
IXYS
Enquête
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-
MOQ: 27  MPQ: 1
IC MOSFET DRVR DUAL 15A 28-SOIC
Tube - 8 V ~ 30 V -40°C ~ 150°C (TJ) 28-SOIC Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 4.5ns,3.5ns 0.8V,3.5V 15A,15A
IXDS430SI
IXYS
Enquête
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MOQ: 27  MPQ: 1
IC DRVR MOSF/IGBT 30A 28-SOIC
Bulk - 8.5 V ~ 35 V -55°C ~ 150°C (TJ) 28-SOIC Inverting,Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 18ns,16ns 0.8V,3.5V 30A,30A
IR21366SPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DVR 3PHASE SOFT TURN 28-SOIC
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2330DSPBF
Infineon Technologies
Enquête
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MOQ: 125  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330SPBF
Infineon Technologies
Enquête
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MOQ: 125  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332DSPBF
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332SPBF
Infineon Technologies
Enquête
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-
MOQ: 125  MPQ: 1
IC BRIDGE DVR 3PH 600V 28-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330DSTRPBF
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR 3-PHASE BRIDGE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2330STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR 3-PHASE BRIDGE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332DSTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR 3-PHASE BRIDGE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2332STRPBF
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR 3-PHASE BRIDGE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
AUIRS2336S
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC GATE DRIVER HV 3PHASE 28SOIC
Tube Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-SOIC Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
AUIRS20302S
Infineon Technologies
Enquête
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MOQ: 125  MPQ: 1
IC GATE DRIVE AUTOMOTIVE 28SOIC
Tube Automotive,AEC-Q100 24 V ~ 150 V -40°C ~ 125°C (TJ) 28-SOIC Non-Inverting 3-Phase Half-Bridge 6 N-Channel MOSFET 200V 100ns,35ns 0.7V,2.5V 200mA,350mA