- Voltage - Supply:
-
- Operating Temperature:
-
- Supplier Device Package:
-
- Channel Type:
-
- Driven Configuration:
-
- Gate Type:
-
- High Side Voltage - Max (Bootstrap):
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 123
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 600V 28-SOIC
|
Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 600V 28-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tape & Reel (TR) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 27 MPQ: 1
|
IC MOSFET DRVR DUAL 15A 28-SOIC
|
Tube | - | 8 V ~ 30 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 4.5ns,3.5ns | 0.8V,3.5V | 15A,15A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 27 MPQ: 1
|
IC DRVR MOSF/IGBT 30A 28-SOIC
|
Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 28-SOIC | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 18ns,16ns | 0.8V,3.5V | 30A,30A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3PHASE SOFT TURN 28-SOIC
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3-PHASE BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3-PHASE BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3-PHASE BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR 3-PHASE BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28SOIC
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Tube | Automotive,AEC-Q100 | 24 V ~ 150 V | -40°C ~ 125°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 200V | 100ns,35ns | 0.7V,2.5V | 200mA,350mA |