- Packaging:
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- Voltage - Supply:
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- Supplier Device Package:
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- Input Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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Découvrez les produits 16
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Supplier Device Package | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Supplier Device Package | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
1,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | PG-TSSOP-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | PG-TSSOP-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | EiceDriver | 10 V ~ 17.5 V | PG-TSSOP-28 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28-17 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28-17 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28DSO
|
- | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28-17 | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
|
Tape & Reel (TR) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
Cut Tape (CT) | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
736
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
- | EiceDriver | 13 V ~ 17.5 V | PG-DSO-28 | Inverting | IGBT,N-Channel,P-Channel MOSFET | 620V | 60ns,26ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Tube | Automotive,AEC-Q100 | 24 V ~ 150 V | 28-SOIC | Non-Inverting | N-Channel MOSFET | 200V | 100ns,35ns | 0.7V,2.5V | 200mA,350mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 28-SOIC | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | 28-SOIC | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
- | - | 10 V ~ 20 V | 28-SOIC | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 600V | 20ns,20ns | 0.8V,2.2V | 1A,1A |