Découvrez les produits 16
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Supplier Device Package Input Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
6EDL04I06PTXUMA1
Infineon Technologies
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
Tape & Reel (TR) EiceDriver 13 V ~ 17.5 V PG-DSO-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06PTXUMA1
Infineon Technologies
1,600
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
Cut Tape (CT) EiceDriver 13 V ~ 17.5 V PG-DSO-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06PTXUMA1
Infineon Technologies
1,600
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
- EiceDriver 13 V ~ 17.5 V PG-DSO-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6EDL04N06PTXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
Tape & Reel (TR) EiceDriver 10 V ~ 17.5 V PG-TSSOP-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6EDL04N06PTXUMA1
Infineon Technologies
995
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
Cut Tape (CT) EiceDriver 10 V ~ 17.5 V PG-TSSOP-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6EDL04N06PTXUMA1
Infineon Technologies
995
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
- EiceDriver 10 V ~ 17.5 V PG-TSSOP-28 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6EDL04I06NTXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28DSO
Tape & Reel (TR) EiceDriver 13 V ~ 17.5 V PG-DSO-28-17 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06NTXUMA1
Infineon Technologies
524
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28DSO
Cut Tape (CT) EiceDriver 13 V ~ 17.5 V PG-DSO-28-17 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6EDL04I06NTXUMA1
Infineon Technologies
524
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28DSO
- EiceDriver 13 V ~ 17.5 V PG-DSO-28-17 Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR DSO28
Tape & Reel (TR) EiceDriver 13 V ~ 17.5 V PG-DSO-28 Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
736
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
Cut Tape (CT) EiceDriver 13 V ~ 17.5 V PG-DSO-28 Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
6ED003L06F2XUMA1
Infineon Technologies
736
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR DSO28
- EiceDriver 13 V ~ 17.5 V PG-DSO-28 Inverting IGBT,N-Channel,P-Channel MOSFET 620V 60ns,26ns 1.1V,1.7V -
AUIRS20302S
Infineon Technologies
Enquête
-
-
MOQ: 125  MPQ: 1
IC GATE DRIVE AUTOMOTIVE 28SOIC
Tube Automotive,AEC-Q100 24 V ~ 150 V 28-SOIC Non-Inverting N-Channel MOSFET 200V 100ns,35ns 0.7V,2.5V 200mA,350mA
MIC4609YWM-TR
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
Tape & Reel (TR) - 10 V ~ 20 V 28-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V 1A,1A
MIC4609YWM-TR
Microchip Technology
275
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
Cut Tape (CT) - 10 V ~ 20 V 28-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V 1A,1A
MIC4609YWM-TR
Microchip Technology
275
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
- - 10 V ~ 20 V 28-SOIC Non-Inverting IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V 1A,1A