- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 123
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
995
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER BRIDGE 3PHASE 28-SOIC
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- | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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|
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Infineon Technologies |
921
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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|
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Infineon Technologies |
921
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 28-SOIC
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- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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|
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Infineon Technologies |
872
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
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Infineon Technologies |
872
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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ON Semiconductor |
40
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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ON Semiconductor |
40
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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- | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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|
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 0.8V，2.5V | 350mA，650mA |
