Number of Drivers:
Découvrez les produits 254
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX4428ESA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRVR INV/NONINV 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
EL7457CLZ-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QFN
Tape & Reel (TR) - 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN (4x4) Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CUZ-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-QSOP
Tape & Reel (TR) - 4.5 V ~ 18 V 16-SSOP (0.154",3.90mm Width) 16-QSOP Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MAX4427ESA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRV DUAL NONINV 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
EL7457CSZ-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER QUAD 40MHZ HS 16-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MAX627ESA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX628ESA+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
EL7457CLZ-T7A
Renesas Electronics America Inc.
Enquête
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MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16QFN
Tape & Reel (TR) - 4.5 V ~ 18 V 16-VQFN Exposed Pad 16-QFN-EP (4x4) Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CUZ-T7A
Renesas Electronics America Inc.
Enquête
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MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16QSOP
Tape & Reel (TR) - 4.5 V ~ 18 V 16-SSOP (0.154",3.90mm Width) 16-QSOP Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
EL7457CSZ-T7A
Renesas Electronics America Inc.
Enquête
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MOQ: 250  MPQ: 1
IC DVR CMOS 40MHZ QUAD 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount Non-Inverting Independent High-Side or Low-Side 4 N-Channel,P-Channel MOSFET - 13.5ns,13ns 0.8V,2V 2A,2A
MAX627EPA+
Maxim Integrated
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX620EWN+
Maxim Integrated
Enquête
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MOQ: 80  MPQ: 1
IC DRVR MOSFET QUAD 18-SOIC
Tube - 4.5 V ~ 16.5 V 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -
1SD1548AI UL
Power Integrations
Enquête
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MOQ: 3  MPQ: 1
GATE DVR CORE 1700V 44PIN UL
- SCALE-1 15V - - - - - Half-Bridge 1 IGBT,N-Channel,P-Channel MOSFET - - - 48A,48A
2SD315AI-33
Power Integrations
Enquête
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MOQ: 3  MPQ: 1
IGBT DVR CORE 3300V
- SCALE-1 15V - - - - - Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET - - - 18A,18A
1SP0635V2M1-25
Power Integrations
Enquête
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MOQ: 7  MPQ: 1
IC SINGLE GATE DRIVER 35A
Tray SCALE-2 14.5 V ~ 15.5 V Module Module Surface Mount - Single High-Side or Low-Side 1 IGBT 2500V 9ns,30ns - 35A,35A
MAX4420EPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-DIP
Tube - 4.5 V ~ 18 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4420ESA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4427EPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8-DIP
Tube - 4.5 V ~ 18 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4427ESA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8SOIC
Tube - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX620EPN
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
Tube - 4.5 V ~ 16.5 V 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs 0.8V,2.4V -