- Voltage - Supply：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 32
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
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Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
|
|
|
Maxim Integrated |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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Maxim Integrated |
322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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|
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Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 100 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DRIVER DUAL MOSFET 1.5A 8-DIP
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4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DVR DUAL-POWER MOSFET 8-DIP
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4.5 V ~ 18 V | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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12 V ~ 36 V | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 400ns，400ns | 0.8V，2V | - | ||
|
|
Microchip Technology |
334
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
12 V ~ 36 V | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 400ns，400ns | 0.8V，2V | - | |||
|
|
Microchip Technology |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI/LO SIDE 8DIP
|
7 V ~ 32 V | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 2V，4.5V | - | |||
|
|
Microchip Technology |
433
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF 12A LO SIDE 8DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | 12A，12A | |||
|
|
Microchip Technology |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF 12A LO SIDE 8DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 20ns，24ns | 0.8V，2.4V | 12A，12A | |||
|
|
Microchip Technology |
539
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL OD 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 40ns，40ns (Max) | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
40
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE DUAL 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | 0.8V，2V | - | |||
|
|
Microchip Technology |
540
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
526
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
4.5 V ~ 18 V | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL 8-DIP
|
4.5 V ~ 16 V | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A |
