- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 204
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DRIVER 2CH 6A 16TDFN
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Tube | -40°C ~ 125°C (TJ) | 16-WFDFN Exposed Pad | 16-TDFN (5x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | - | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
IC MOSFET DRIVER 2CH 6A 16TDFN
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Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 16-WFDFN Exposed Pad | 16-TDFN (5x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | - | 6A，6A | ||
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Microchip Technology |
19,800
|
3 jours |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1A HS 8SOIC
|
Tape & Reel (TR) | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
3,300
|
3 jours |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
5,968
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
5,968
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
3,230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Cut Tape (CT) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
3,230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
- | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
3,205
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Cut Tape (CT) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
3,205
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
- | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
Tape & Reel (TR) | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
3,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
Cut Tape (CT) | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
3,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
|
- | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
947
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tube | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
999
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8SOIC
|
Tube | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
|
Microchip Technology |
437
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 35ns，25ns | 0.8V，3V | 1.2A，1.2A |
