- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 91
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
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Renesas Electronics America Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
4,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
1,135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
Tube | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
559
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
Tube | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET SGL HS 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 582 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MONO PIN DVR HS 8DIP
|
Tube | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 485 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
|
Tube | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 4ns，4ns | 0.6V，2.4V | 4A，4A |
