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Découvrez les produits 148
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Input Type Channel Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL2110AR4Z
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC MSFT DVR HALF-BRG 100V 12-DFN
Tube - -40°C ~ 125°C (TJ) 12-VFDFN Exposed Pad 12-DFN (4x4) Non-Inverting Independent 114V 9ns,7.5ns 3.7V,7.4V 3A,4A
LM5109SD
Texas Instruments
Enquête
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-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
Tape & Reel (TR) - -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent 118V 15ns,15ns 0.8V,2.2V 1A,1A
LM5109SD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
Cut Tape (CT) - -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent 118V 15ns,15ns 0.8V,2.2V 1A,1A
LM5109SD
Texas Instruments
Enquête
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MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
- - -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent 118V 15ns,15ns 0.8V,2.2V 1A,1A
LM5107SDX/NOPB
Texas Instruments
Enquête
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MOQ: 4500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8WSON
Tape & Reel (TR) - -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent 118V 15ns,15ns 0.8V,2.2V 1.3A,1.4A
HIP2120FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2120FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2120FRTBZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2120FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2121FRTAZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2121FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2121FRTBZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2121FRTBZ-T
Renesas Electronics America Inc.
Enquête
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-
MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Synchronous 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2122FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Independent 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2122FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Independent 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2122FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Independent 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2122FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Independent 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Independent 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 10-WDFN Exposed Pad 10-TDFN (4x4) Inverting Independent 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - -55°C ~ 150°C (TJ) 9-WDFN Exposed Pad 9-TDFN (4x4) Inverting Independent 114V 10ns,10ns 1.4V,2.2V 2A,2A