- Series：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 27
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
13,251
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 118V | 15ns，15ns | 0.8V，2.2V | 1.3A，1.4A | ||
|
|
|
Texas Instruments |
6,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
1,510
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 118V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
2,481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
- | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
|
|
|
Texas Instruments |
2,072
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Automotive，AEC-Q100 | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
871
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V | 3A，4A | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
- | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8DFN
|
- | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 1.4V，2.2V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 12-DFN
|
- | -40°C ~ 125°C (TJ) | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Non-Inverting | Independent | 114V | 9ns，7.5ns | 3.7V，7.4V | 3A，4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
- | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
- | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
- | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
- | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Synchronous | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
- | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
- | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
- | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
- | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Inverting | Independent | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A |
