Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 188
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IRS2111STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 8.3V,12.6V
IRS2108SPBF
Infineon Technologies
Enquête
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MOQ: 3800  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS2109PBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC DVR HALF BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS2111PBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 8.3V,12.6V
IRS2118SPBF
Infineon Technologies
Enquête
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MOQ: 3800  MPQ: 1
IC DRIVER MOSFET/IGBT 1CH 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS2108PBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS2112STRPBF
Infineon Technologies
Enquête
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MOQ: 1000  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS21084STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 14-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS21084PBF
Infineon Technologies
Enquête
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MOQ: 1500  MPQ: 1
IC DRIVER HALF-BRIDGE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS2112PBF
Infineon Technologies
Enquête
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MOQ: 1500  MPQ: 1
IC DRIVER HI/LO SIDE 600V 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS21091PBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC DVR HALF BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS21271PBF
Infineon Technologies
Enquête
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MOQ: 3000  MPQ: 1
IC DVR CURR SENSE 1CH 600V 8DIP
Tube - 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS21064PBF
Infineon Technologies
Enquête
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MOQ: 1500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS21094PBF
Infineon Technologies
Enquête
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MOQ: 1500  MPQ: 1
IC DVR HALF BRIDGE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V
IRS2128SPBF
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS21281PBF
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER CURR SENSE 1CH 8-DIP
Tube - 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS2128PBF
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER CURR SENSE 1CH 8-DIP
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS21281STRPBF
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Tape & Reel (TR) - 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS21281STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Cut Tape (CT) - 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS21281STRPBF
Infineon Technologies
Enquête
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MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
- - 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V