Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 41
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Channel Type Driven Configuration Number of Drivers High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
DGD2104MS8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) -40°C ~ 150°C (TJ) Synchronous Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) -40°C ~ 150°C (TJ) Synchronous Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- -40°C ~ 150°C (TJ) Synchronous Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD1503S8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- -40°C ~ 150°C (TJ) Independent Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD2103MS8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD2103MS8-13
Diodes Incorporated
2,401
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD2103MS8-13
Diodes Incorporated
2,401
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.8V,2.5V
DGD2304S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.7V,2.3V
DGD2304S8-13
Diodes Incorporated
1,703
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.7V,2.3V
DGD2304S8-13
Diodes Incorporated
1,703
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 70ns,35ns 0.7V,2.3V
DGD2103S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) -40°C ~ 125°C (TA) Independent Half-Bridge 2 600V 100ns,35ns 0.8V,2.5V
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) -40°C ~ 125°C (TA) Independent Half-Bridge 2 600V 100ns,35ns 0.8V,2.5V
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- -40°C ~ 125°C (TA) Independent Half-Bridge 2 600V 100ns,35ns 0.8V,2.5V
DGD1504S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) -40°C ~ 125°C (TA) Synchronous Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD1504S8-13
Diodes Incorporated
2,301
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) -40°C ~ 125°C (TA) Synchronous Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD1504S8-13
Diodes Incorporated
2,301
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- -40°C ~ 125°C (TA) Synchronous Half-Bridge 2 250V 70ns,35ns 0.8V,2.5V
DGD2103AS8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 100ns,50ns 0.8V,2.5V
DGD2103AS8-13
Diodes Incorporated
2,490
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) -40°C ~ 150°C (TJ) Independent Half-Bridge 2 600V 100ns,50ns 0.8V,2.5V