Fabricant:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 188
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V
DGD2104S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V
DGD2104S8-13
Diodes Incorporated
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V
DGD2104S8-13
Diodes Incorporated
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V
DGD2106S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V
DGD2106S8-13
Diodes Incorporated
2,360
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V
DGD2106S8-13
Diodes Incorporated
2,360
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V
IRS2304STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF BRIDGE HV HS 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V
IRS2304STRPBF
Infineon Technologies
1,317
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE HV HS 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V
IRS2304STRPBF
Infineon Technologies
1,317
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE HV HS 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V
IRS2117STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS2117STRPBF
Infineon Technologies
2,266
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS2117STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
AUIRS21271STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
- Automotive,AEC-Q100 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V
IRS2118STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS2118STRPBF
Infineon Technologies
1,217
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V
IRS2118STRPBF
Infineon Technologies
1,217
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER SGL CHAN 8-SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 75ns,35ns 6V,9.5V