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- Voltage - Supply：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 188
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
11,996
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
11,996
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
1,075
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR HALF-BRIDGE SHTDN 8-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
245
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
2,967
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
1,219
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET/IGBT 1CH 8-SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | ||
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Infineon Technologies |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
3,056
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
3,056
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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Diodes Incorporated |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | ||
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Diodes Incorporated |
3,648
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF BRIDGE SO-8
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Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | ||
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Diodes Incorporated |
3,648
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
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- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
3,800
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | ||
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Infineon Technologies |
2,815
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | ||
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Infineon Technologies |
4,250
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 200V 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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Infineon Technologies |
2,051
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 200V 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | ||
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|
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Infineon Technologies |
8,170
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
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Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | ||
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|
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Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | ||
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|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V |
