- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 235
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8SOIC
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Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8-DIP
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Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 285 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8SOIC
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 54 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | Independent | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 54 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | Independent | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 54 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 54 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 75 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,45ns | - | ||||
Infineon Technologies |
Enquête
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-
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MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-SOIC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 27 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 44-PLCC
|
Tube | - | 10 V ~ 20 V | 125°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V |