- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 55
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
1,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | PG-DSO-14 | Surface Mount | Non-Inverting | 2 | N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14SOP
|
Tape & Reel (TR) | - | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.2V,2.5V | ||||
ON Semiconductor |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14SOP
|
Cut Tape (CT) | - | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.2V,2.5V | ||||
ON Semiconductor |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14SOP
|
- | - | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.2V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1482 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1134 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Through Hole | Inverting | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V |