Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 235
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IRS2330DJTRPBF
Infineon Technologies
Enquête
-
-
MOQ: 500  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V
IRS2330DJTRPBF
Infineon Technologies
23
3 jours
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V
IRS2330DJTRPBF
Infineon Technologies
23
3 jours
-
MOQ: 1  MPQ: 1
IC BRIDGE DVR 3PH 600V 44-PLCC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V
IR2133
Infineon Technologies
Enquête
-
-
MOQ: 52  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V
IR2111
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V
IR2112
Infineon Technologies
Enquête
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-
MOQ: 225  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
IR2117
Infineon Technologies
Enquête
-
-
MOQ: 300  MPQ: 1
IC MOSFET DRIVER SGL-CH 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
IR2127
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V
IR2130
Infineon Technologies
Enquête
-
-
MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Through Hole Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V
IR2133J
Infineon Technologies
Enquête
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-
MOQ: 54  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V
IR2233J
Infineon Technologies
Enquête
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-
MOQ: 27  MPQ: 1
IC DRIVER 3-PHASE BRIDGE 44-PLCC
Tube - 10 V ~ 20 V 125°C (TJ) 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Surface Mount Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 1200V 90ns,40ns 0.8V,2V
IR2111S
Infineon Technologies
Enquête
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-
MOQ: 285  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V
IR2111STR
Infineon Technologies
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER HALF-BRIDGE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 8.3V,12.6V
IR2112S
Infineon Technologies
Enquête
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-
MOQ: 225  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
IR2112STR
Infineon Technologies
Enquête
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-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
98-0065
Infineon Technologies
Enquête
-
-
MOQ: 285  MPQ: 1
IC MOSFET DRIVER SGL-CH 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
IR2117STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER SGL-CH 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
IR2118
Infineon Technologies
Enquête
-
-
MOQ: 300  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
98-0231
Infineon Technologies
Enquête
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-
MOQ: 285  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V
98-0066
Infineon Technologies
Enquête
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-
MOQ: 285  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8SOIC
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V