- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 75
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | 8.9ns，8.9ns | - | ||
|
|
|
Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8SOIC
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | ||
|
|
|
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | 1.2V，1.9V | ||
|
|
|
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | ||
|
|
|
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOW SIDE DUAL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 8SON
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | - |
