- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 211
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
ON Semiconductor |
19,420
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
9,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | - | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | - | |||
|
|
ON Semiconductor |
3,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | - | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HS 5A DUAL 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 8ns，8ns | 1.2V，1.8V | |||
|
|
ON Semiconductor |
3,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HS 5A DUAL 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 8ns，8ns | 1.2V，1.8V | |||
|
|
ON Semiconductor |
3,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HS 5A DUAL 8SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 8ns，8ns | 1.2V，1.8V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
3,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
3,513
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V |
