Fabricant:
Packaging:
Series:
Operating Temperature:
Package / Case:
Supplier Device Package:
Mounting Type:
Write Cycle Time - Word, Page:
Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Technology Write Cycle Time - Word, Page
GD9FS1G8F2AMGI
GigaDevice Semiconductor (HK) Limited
Enquête
-
-
MOQ: 1920  MPQ: 1
SLC NAND FLASH
Tray - - - - - 1Gb (128M x 8) FLASH - NAND -
TC58BYG0S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
1GB SLC NAND BGA 24NM I TEMP (EE
- Benand -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) Surface Mount 1Gb (128M x 8) FLASH - NAND (SLC) 25ns
TC58BYG1S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
2GB SLC NAND BGA 24NM I TEMP (EE
- Benand -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) Surface Mount 2Gb (256M x 8) FLASH - NAND (SLC) 25ns
TC58NYG1S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
2G NAND SLC 24NM BGA
- - -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) Surface Mount 2Gb (256M x 8) FLASH - NAND (SLC) 25ns
TC58NYG2S0HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
4GB SLC NAND 24NM BGA 9X11 1.8V
- - -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) Surface Mount 4Gb (512M x 8) FLASH - NAND (SLC) 25ns
TH58NYG2S3HBAI4
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 210  MPQ: 1
4GB SLC NAND 24NM BGA 9X11 1.8V
- - -40°C ~ 85°C (TA) 63-VFBGA 63-TFBGA (9x11) Surface Mount 4Gb (512M x 8) FLASH - NAND (SLC) 25ns
TH58BYG3S0HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
8GB SLC NAND 24NM BGA 6.5X8 1.8V
- Benand -40°C ~ 85°C (TA) 67-VFBGA 67-VFBGA (6.5x8) Surface Mount 8Gb (1G x 8) FLASH - NAND (SLC) 25ns