Supplier Device Package:
Memory Size:
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Découvrez les produits 1,702
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
AS4C16M16MD1-6BCN
Alliance Memory,Inc.
701
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 60FPBGA
Tray - -25°C ~ 85°C (TJ) 60-TFBGA 60-FPBGA (8x9) Surface Mount 256Mb (16M x 16) Volatile SDRAM - Mobile LPDDR DRAM 166MHz - Parallel 15ns
IS66WVE4M16EALL-70BLI
ISSI,Integrated Silicon Solution Inc
1,920
3 jours
-
MOQ: 1  MPQ: 1
IC PSRAM 64M PARALLEL 48TFBGA
Tray - -40°C ~ 85°C (TA) 48-TFBGA 48-TFBGA (6x8) Surface Mount 64Mb (4M x 16) Volatile PSRAM (Pseudo SRAM) PSRAM - 70ns Parallel 70ns
MT46H32M16LFBF-5 IT:C
Micron Technology Inc.
17,277
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 60VFBGA
Tray - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 512Mb (32M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns Parallel 15ns
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tape & Reel (TR) - -25°C ~ 85°C (TC) 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Cut Tape (CT) - -25°C ~ 85°C (TC) 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5E TR
Winbond Electronics
2,500
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
- - -25°C ~ 85°C (TC) 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W949D2DBJX5I
Winbond Electronics
2,215
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tray - -40°C ~ 85°C (TA) 90-TFBGA 90-VFBGA (8x13) Surface Mount 512Mb (16M x 32) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
W94AD6KBHX5I
Winbond Electronics
2,207
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60VFBGA
Tray - -40°C ~ 85°C (TC) 60-TFBGA 60-VFBGA (8x9) Surface Mount 1Gb (64M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5ns Parallel 15ns
IS42VM16160K-75BLI
ISSI,Integrated Silicon Solution Inc
1,192
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TFBGA
Tray - -40°C ~ 85°C (TA) 54-TFBGA 54-TFBGA (8x8) Surface Mount 256Mb (16M x 16) Volatile SDRAM - Mobile DRAM 133MHz 6ns Parallel -
MT46H64M16LFBF-5 IT:B TR
Micron Technology Inc.
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 60VFBGA
Tape & Reel (TR) - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 1Gb (64M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns Parallel 15ns
MT46H64M16LFBF-5 IT:B TR
Micron Technology Inc.
3,784
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60VFBGA
Cut Tape (CT) - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 1Gb (64M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns Parallel 15ns
MT46H64M16LFBF-5 IT:B TR
Micron Technology Inc.
3,784
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60VFBGA
- - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 1Gb (64M x 16) Volatile SDRAM - Mobile LPDDR DRAM 200MHz 5.0ns Parallel 15ns
MT46H128M16LFDD-48 IT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60VFBGA
Tape & Reel (TR) - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 2Gb (128M x 16) Volatile SDRAM - Mobile LPDDR DRAM 208MHz 5.0ns Parallel 14.4ns
MT46H128M16LFDD-48 IT:C TR
Micron Technology Inc.
1,644
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60VFBGA
Cut Tape (CT) - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 2Gb (128M x 16) Volatile SDRAM - Mobile LPDDR DRAM 208MHz 5.0ns Parallel 14.4ns
MT46H128M16LFDD-48 IT:C TR
Micron Technology Inc.
1,644
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60VFBGA
- - -40°C ~ 85°C (TA) 60-VFBGA 60-VFBGA (8x9) Surface Mount 2Gb (128M x 16) Volatile SDRAM - Mobile LPDDR DRAM 208MHz 5.0ns Parallel 14.4ns
IS66WVH8M8ALL-166B1LI
ISSI,Integrated Silicon Solution Inc
460
3 jours
-
MOQ: 1  MPQ: 1
IC PSRAM 64M PARALLEL 24TFBGA
Tray - -40°C ~ 85°C (TA) 24-TBGA 24-TFBGA (6x8) Surface Mount 64Mb (8M x 8) Volatile PSRAM (Pseudo SRAM) PSRAM 166MHz 36ns Parallel 36ns
IS66WVE4M16ECLL-70BLI
ISSI,Integrated Silicon Solution Inc
494
3 jours
-
MOQ: 1  MPQ: 1
IC PSRAM 64M PARALLEL 48TFBGA
Tray - -40°C ~ 85°C (TA) 48-TFBGA 48-TFBGA (6x8) Surface Mount 64Mb (4M x 16) Volatile PSRAM (Pseudo SRAM) PSRAM - 70ns Parallel 70ns
IS43LR16320B-6BLI
ISSI,Integrated Silicon Solution Inc
205
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 60TFBGA
Tray - -40°C ~ 85°C (TA) 60-TFBGA 60-TFBGA (8x10) Surface Mount 512Mb (32M x 16) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.5ns Parallel 12ns
IS43LR32640A-5BLI
ISSI,Integrated Silicon Solution Inc
128
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 90WBGA
Tray - -40°C ~ 85°C (TA) 90-LFBGA 90-WBGA (8x13) Surface Mount 2Gb (64M x 32) Volatile SDRAM - DDR DRAM 200MHz 5ns Parallel 15ns
IS66WVE2M16ECLL-70BLI
ISSI,Integrated Silicon Solution Inc
480
3 jours
-
MOQ: 1  MPQ: 1
IC PSRAM 32M PARALLEL 48TFBGA
Tray - -40°C ~ 85°C (TA) 48-TFBGA 48-TFBGA (6x8) Surface Mount 32Mb (2M x 16) Volatile PSRAM (Pseudo SRAM) PSRAM - 70ns Parallel 70ns