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- Voltage - Supply：
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- Operating Temperature：
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- Memory Size：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 267
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,872
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,872
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
Alliance Memory，Inc. |
4,009
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM | 166MHz | 5ns | 12ns | ||
|
|
|
Alliance Memory，Inc. |
1,020
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tray | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 256Mb (16M x 16) | SDRAM | 166MHz | 5ns | 12ns | ||
|
|
|
Alliance Memory，Inc. |
408
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 143MHz | 5.4ns | 2ns | ||
|
|
|
Alliance Memory，Inc. |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 64Mb (4M x 16) | SDRAM | 166MHz | 5.4ns | 2ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | SDRAM - Mobile | 133MHz | 6ns | - | ||
|
|
|
Alliance Memory，Inc. |
1,904
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tray | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 64Mb (4M x 16) | SDRAM | 166MHz | 5.4ns | 2ns | ||
|
|
|
Alliance Memory，Inc. |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 128Mb (8M x 16) | SDRAM | 143MHz | 5.4ns | 14ns | ||
|
|
|
Alliance Memory，Inc. |
436
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 128Mb (8M x 16) | SDRAM | 166MHz | 5ns | 12ns | ||
|
|
|
Alliance Memory，Inc. |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 256Mb (16M x 16) | SDRAM | 143MHz | 5.4ns | 14ns | ||
|
|
|
Alliance Memory，Inc. |
9
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54TFBGA
|
Tray | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 128Mb (8M x 16) | SDRAM | 166MHz | 5ns | 12ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 166MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 200MHz | 4.8ns | - | ||
|
|
|
Alliance Memory，Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 143MHz | 5.4ns | 2ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 696 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 696 MPQ: 1
|
IC DRAM 64M PARALLEL 54TFBGA
|
Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 64Mb (4M x 16) | SDRAM | 166MHz | 5.4ns | - |
