Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Memory Size	Technology	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Memory Size	Technology	Write Cycle Time - Word, Page
	GD5F1GQ4UFYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F1GQ4UFYIGR	GigaDevice Semiconductor (HK) Limited	309	3 jours	-	SPI NAND FLASH MOQ: 1 MPQ: 1	SPI NAND FLASH	Cut Tape (CT)	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F1GQ4UFYIGR	GigaDevice Semiconductor (HK) Limited	309	3 jours	-	SPI NAND FLASH MOQ: 1 MPQ: 1	SPI NAND FLASH	-	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F1GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F1GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F1GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	2.7 V ~ 3.6 V	1Gb (128M x 8)	FLASH - NAND	700μs
	GD5F2GQ4UEYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	2Gb (256M x 8)	FLASH - NAND	700μs
	GD5F2GQ4UFYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	2Gb (256M x 8)	FLASH - NAND	700μs
	GD5F2GQ4UEYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	2.7 V ~ 3.6 V	2Gb (256M x 8)	FLASH - NAND	700μs
	GD5F4GQ4RBYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	1.7 V ~ 2 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4RCYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	1.7 V ~ 2 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4UBYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4UCYIGY	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 4800 MPQ: 1	SPI NAND FLASH	Tray	2.7 V ~ 3.6 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4RBYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	1.7 V ~ 2 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4RCYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	1.7 V ~ 2 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4UBYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	2.7 V ~ 3.6 V	4Gb (512M x 8)	FLASH - NAND	-
	GD5F4GQ4UCYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	SPI NAND FLASH MOQ: 3000 MPQ: 1	SPI NAND FLASH	Tape & Reel (TR)	2.7 V ~ 3.6 V	4Gb (512M x 8)	FLASH - NAND	-
	GD25LQ256DYIGR	GigaDevice Semiconductor (HK) Limited	Enquête	-	-	NOR FLASH MOQ: 3000 MPQ: 1	NOR FLASH	Tape & Reel (TR)	1.65 V ~ 2 V	256Mb (32M x 8)	FLASH - NOR	2.4ms
	GD25LQ256DYIGR	GigaDevice Semiconductor (HK) Limited	997	3 jours	-	NOR FLASH MOQ: 1 MPQ: 1	NOR FLASH	Cut Tape (CT)	1.65 V ~ 2 V	256Mb (32M x 8)	FLASH - NOR	2.4ms
	GD25LQ256DYIGR	GigaDevice Semiconductor (HK) Limited	997	3 jours	-	NOR FLASH MOQ: 1 MPQ: 1	NOR FLASH	-	1.65 V ~ 2 V	256Mb (32M x 8)	FLASH - NOR	2.4ms