- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Memory Size：
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- Memory Type：
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- Memory Format：
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- Clock Frequency：
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- Memory Interface：
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- Write Cycle Time - Word, Page：
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- Conditions sélectionnées:
Découvrez les produits 219
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|
|
|
Cypress Semiconductor Corp |
4,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
Tray | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
NOR FLASH
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 512Mb (64M x 8) | Non-Volatile | FLASH - NOR | Flash | 104MHz | - | SPI - Quad I/O | 50μs，2.4ms | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
3,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
NOR FLASH
|
Cut Tape (CT) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 512Mb (64M x 8) | Non-Volatile | FLASH - NOR | Flash | 104MHz | - | SPI - Quad I/O | 50μs，2.4ms | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
3,235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
NOR FLASH
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 512Mb (64M x 8) | Non-Volatile | FLASH - NOR | Flash | 104MHz | - | SPI - Quad I/O | 50μs，2.4ms | ||
|
|
|
Cypress Semiconductor Corp |
1,583
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16MBIT 108MHZ 8WSON
|
Tube | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
4,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 64M SPI 108MHZ 8WSON
|
Tube | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 64Mb (8M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
Tape & Reel (TR) | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
3,379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
Cut Tape (CT) | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
3,379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
- | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
866
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 64M SPI 108MHZ 8WSON
|
Tube | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 64Mb (8M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
2,001
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 32M SPI 108MHZ 8WSON
|
Tray | Automotive，AEC-Q100，FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | 32Mb (4M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
SPI NAND FLASH
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | Non-Volatile | FLASH - NAND | Flash | 120MHz | - | SPI - Quad I/O | 700μs | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SPI NAND FLASH
|
Cut Tape (CT) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | Non-Volatile | FLASH - NAND | Flash | 120MHz | - | SPI - Quad I/O | 700μs | ||
|
|
|
GigaDevice Semiconductor (HK) Limited |
309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SPI NAND FLASH
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | Non-Volatile | FLASH - NAND | Flash | 120MHz | - | SPI - Quad I/O | 700μs | ||
|
|
|
Cypress Semiconductor Corp |
562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
Tray | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 105°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G SPI 104MHZ 8WSON
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | 104MHz | 280μs | SPI - Quad I/O | - | ||
|
|
|
Toshiba Memory America，Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 1G SPI 104MHZ 8WSON
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Gb (128M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | 104MHz | 155μs | SPI - Quad I/O | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC FLASH 16MBIT 108MHZ 8WSON
|
Tape & Reel (TR) | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1470 MPQ: 1
|
IC FLASH 16MBIT 108MHZ 8WSON
|
Tray | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC FLASH 16M SPI 108MHZ 8WSON
|
Tape & Reel (TR) | FL1-K | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8) | Non-Volatile | FLASH - NOR | Flash | 108MHz | - | SPI - Quad I/O | 3ms |
