Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Voltage - Supply：

Operating Temperature：

Mounting Type：

Memory Size：

Technology：

Access Time：

Memory Interface：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Mounting Type	Memory Size	Technology	Access Time	Memory Interface
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Mounting Type	Memory Size	Technology	Access Time	Memory Interface
	MT44K16M36RB-107E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 933MHZ	-	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	576Mb (16M x 36)	DRAM	8ns	Parallel
	MT44K32M18RB-107E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 933MHZ	-	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	576Mb (32M x 18)	DRAM	8ns	Parallel
	EDF8164A3PK-JD-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 8G PARALLEL 933MHZ FBGA MOQ: 1680 MPQ: 1	IC DRAM 8G PARALLEL 933MHZ FBGA	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	8Gb (128M x 64)	SDRAM - Mobile LPDDR3	-	Parallel
	EDF8164A3PK-JD-F-R TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 8G PARALLEL 933MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 8G PARALLEL 933MHZ FBGA	Tape & Reel (TR)	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	8Gb (128M x 64)	SDRAM - Mobile LPDDR3	-	Parallel
	MT41K1G4RG-107:N	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1260 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	4Gb (1G x 4)	SDRAM - DDR3L	20ns	Parallel
	MT41K256M16TW-107 AUT:P	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 1368 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	-	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	-	4Gb (256M x 16)	SDRAM - DDR3L	20ns	Parallel
	MT44K64M18RB-107E IT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1.125G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 1.125G PARALLEL 933MHZ	-	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	1.125Gb (64Mb x 18)	DRAM	8ns	Parallel
	MT41K1G4RG-107:N TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	4Gb (1G x 4)	SDRAM - DDR3L	20ns	Parallel
	MT41K256M16TW-107 AUT:P TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 4G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 4G PARALLEL 933MHZ	Tape & Reel (TR)	1.283 V ~ 1.45 V	-40°C ~ 125°C (TC)	-	4Gb (256M x 16)	SDRAM - DDR3L	20ns	Parallel
	MT44K64M18RB-107E IT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 1.125G PARALLEL 933MHZ MOQ: 1000 MPQ: 1	IC DRAM 1.125G PARALLEL 933MHZ	Tape & Reel (TR)	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	1.125Gb (64Mb x 18)	DRAM	8ns	Parallel
	EDF8164A3PK-JD-F-R	Micron Technology Inc.	Enquête	-	-	IC DRAM 8G PARALLEL 933MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 8G PARALLEL 933MHZ FBGA	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	8Gb (128M x 64)	SDRAM - Mobile LPDDR3	-	Parallel
	MT44K16M36RB-107E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 576M PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 576M PARALLEL 933MHZ	-	1.28 V ~ 1.42 V	-40°C ~ 95°C (TC)	-	576Mb (16M x 36)	DRAM	8ns	Parallel
	MT52L256M32D1PF-107 WT:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 8G 933MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 8G 933MHZ FBGA	Tape & Reel (TR)	1.2V	-30°C ~ 85°C (TC)	Surface Mount	8Gb (256M x 32)	SDRAM - Mobile LPDDR3	-	-
	MT52L256M32D1PF-107 WT:B TR	Micron Technology Inc.	606	3 jours	-	IC DRAM 8G 933MHZ FBGA MOQ: 1 MPQ: 1	IC DRAM 8G 933MHZ FBGA	Cut Tape (CT)	1.2V	-30°C ~ 85°C (TC)	Surface Mount	8Gb (256M x 32)	SDRAM - Mobile LPDDR3	-	-
	MT52L256M32D1PF-107 WT:B TR	Micron Technology Inc.	606	3 jours	-	IC DRAM 8G 933MHZ FBGA MOQ: 1 MPQ: 1	IC DRAM 8G 933MHZ FBGA	-	1.2V	-30°C ~ 85°C (TC)	Surface Mount	8Gb (256M x 32)	SDRAM - Mobile LPDDR3	-	-
	EDFA112A2PD-JD-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 16G PARALLEL 933MHZ	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	16Gb (128M x 128)	SDRAM - Mobile LPDDR3	-	Parallel
	EDFA112A2PF-JD-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 16G PARALLEL 933MHZ	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	16Gb (128M x 128)	SDRAM - Mobile LPDDR3	-	Parallel
	EDFA164A2PM-JD-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 16G PARALLEL 933MHZ	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	16Gb (256M x 64)	SDRAM - Mobile LPDDR3	-	Parallel
	EDFA164A2PM-JDTJ-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 16G PARALLEL 933MHZ	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	16Gb (256M x 64)	SDRAM - Mobile LPDDR3	-	Parallel
	EDFP112A3PB-JDTJ-F-D	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G PARALLEL 933MHZ MOQ: 1190 MPQ: 1	IC DRAM 24G PARALLEL 933MHZ	-	1.14 V ~ 1.95 V	-30°C ~ 105°C (TC)	-	24Gb (192M x 128)	SDRAM - Mobile LPDDR3	-	Parallel

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