Memory Size:
Conditions sélectionnées:
Découvrez les produits 4,822
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
DS2431P-A1+T
Maxim Integrated
3,955
3 jours
-
MOQ: 1  MPQ: 1
IC EEPROM 1K 1WIRE 6TSOC
Cut Tape (CT) - - - - - - - - - - - - -
DS2431P-A1+T
Maxim Integrated
3,955
3 jours
-
MOQ: 1  MPQ: 1
IC EEPROM 1K 1WIRE 6TSOC
- - - - - - - - - - - - - -
CY7C09449PV-AC
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 600  MPQ: 1
IC SRAM 128K PARALLEL 50MHZ
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 160-LQFP Surface Mount 128Kb (4K x 32) Volatile SRAM - Dual Port,Synchronous SRAM 50MHz - Parallel -
CY7C09449PVA-AC
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 40  MPQ: 1
IC SRAM 128K PARALLEL 50MHZ
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 160-LQFP Surface Mount 128Kb (4K x 32) Volatile SRAM - Dual Port,Synchronous SRAM 50MHz - Parallel -
MT44K16M36RB-093E IT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 576M PARALLEL 1067MHZ
- - 1.28 V ~ 1.42 V -40°C ~ 95°C (TC) - - 576Mb (16M x 36) Volatile DRAM DRAM 1067MHz 8ns Parallel -
MT44K32M18RB-093E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 576M PARALLEL 1067MHZ
- - 1.28 V ~ 1.42 V 0°C ~ 95°C (TC) - - 576Mb (32M x 18) Volatile DRAM DRAM 1067MHz 8ns Parallel -
MT44K16M36RB-107E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 576M PARALLEL 933MHZ
- - 1.28 V ~ 1.42 V 0°C ~ 95°C (TC) - - 576Mb (16M x 36) Volatile DRAM DRAM 933MHz 8ns Parallel -
MT44K32M18RB-107E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 576M PARALLEL 933MHZ
- - 1.28 V ~ 1.42 V 0°C ~ 95°C (TC) - - 576Mb (32M x 18) Volatile DRAM DRAM 933MHz 8ns Parallel -
MT40A256M16GE-075E AAT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1020  MPQ: 1
IC DRAM 4G PARALLEL 1.33GHZ
- - 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) - - 4Gb (256M x 16) Volatile SDRAM - DDR4 DRAM 1.33GHz - Parallel -
MT40A256M16GE-075E AIT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1020  MPQ: 1
IC DRAM 4G PARALLEL 1.33GHZ
- - 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) - - 4Gb (256M x 16) Volatile SDRAM - DDR4 DRAM 1.33GHz - Parallel -
MT46H32M16LFBF-6 AAT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1782  MPQ: 1
IC DRAM 512M PARALLEL 166MHZ
- - 1.7 V ~ 1.95 V -40°C ~ 105°C (TA) - - 512Mb (32M x 16) Volatile SDRAM - Mobile LPDDR DRAM 166MHz 5.0ns Parallel 15ns
CY62126EV30LL-45ZSXI
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 1  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
- - - - - - - - - - - - - -
CY62126EV30LL-45ZSXIT
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 1000  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
Tape & Reel (TR) - - - - - - - - - - - - -
CY62126EV30LL-45ZSXIT
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 1  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
Cut Tape (CT) - - - - - - - - - - - - -
CY62126EV30LL-45ZSXIT
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 1  MPQ: 1
IC SRAM 1M PARALLEL 44TSOP II
- - - - - - - - - - - - - -
S25FL128SAGBHVB03
Cypress Semiconductor Corp
4,760
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M SPI 133MHZ
Cut Tape (CT) - - - - - - - - - - - - -
S25FL128SAGBHVB03
Cypress Semiconductor Corp
4,760
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 128M SPI 133MHZ
- - - - - - - - - - - - - -
MX25L12833FZ2I-10G
Macronix
470
3 jours
-
MOQ: 1  MPQ: 1
S-NOR 128M
- - - - - - - - - - - - - -
S29JL064J70TFI003
Cypress Semiconductor Corp
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 64M PARALLEL 48TSOP
Cut Tape (CT) - - - - - - - - - - - - -
S29JL064J70TFI003
Cypress Semiconductor Corp
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 64M PARALLEL 48TSOP
- - - - - - - - - - - - - -