Mémoire - Zui Ai Technology（Taiwan）Company.

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		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
			IS42VM32100D-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 133MHZ MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 133MHZ	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
			IS42RM32100D-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 133MHZ MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 133MHZ	Tape & Reel (TR)	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
			IS42VM32100D-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 166MHZ MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 166MHZ	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
			IS42RM32100D-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 166MHZ MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 166MHZ	Tape & Reel (TR)	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
			IS42VM32100D-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 133MHZ MOQ: 348 MPQ: 1	IC DRAM 32M PARALLEL 133MHZ	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
			IS42RM32100D-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 133MHZ MOQ: 348 MPQ: 1	IC DRAM 32M PARALLEL 133MHZ	Tray	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
			IS42VM32100D-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 166MHZ MOQ: 348 MPQ: 1	IC DRAM 32M PARALLEL 166MHZ	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
			IS42RM32100D-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 166MHZ MOQ: 348 MPQ: 1	IC DRAM 32M PARALLEL 166MHZ	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
			IS43LR32100D-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
			IS43LR32100D-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 480 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
			IS43LR32100D-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
			IS43LR32100D-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 480 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
			IS43LR32100C-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
			IS43LR32100C-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
			IS43LR32100C-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
			IS43LR32100C-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 32M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 32M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns

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