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Découvrez les produits 425
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|
|
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ISSI，Integrated Silicon Solution Inc |
782
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA (8x13) | 256Mb (8M x 32) | SDRAM | DRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
1,262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 256Mb (8M x 32) | SDRAM | DRAM | 166MHz | 5.4ns | - | ||
|
|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA (8x13) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Alliance Memory，Inc. |
1,447
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA (8x13) | 128Mb (4M x 32) | SDRAM | DRAM | 143MHz | 5.4ns | 2ns | ||
|
|
|
Alliance Memory，Inc. |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 128Mb (4M x 32) | SDRAM | DRAM | 166MHz | 5.4ns | 2ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 512Mb (16M x 32) | SDRAM | DRAM | 167MHz | 5.4ns | - | ||
|
|
|
Alliance Memory，Inc. |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA (8x13) | 64Mb (2M x 32) | SDRAM | DRAM | 143MHz | 5.4ns | 2ns | ||
|
|
|
Alliance Memory，Inc. |
3,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 64Mb (2M x 32) | SDRAM | DRAM | 166MHz | 5.4ns | 2ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 256Mb (8M x 32) | SDRAM | DRAM | 143MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | DRAM | 166MHz | 5.5ns | 12ns | ||
|
|
|
Winbond Electronics |
164
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA (8x13) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tray | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 90VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 90-VFBGA (8x13) | 1Gb (32M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Alliance Memory，Inc. |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 8M PARALLEL 90TFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA (8x13) | 8Mb (1M x 8) | SRAM - Asynchronous | SRAM | - | 10ns | 10ns | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-VFBGA (8x13) | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | DRAM | 200MHz | 5ns | 15ns |
