- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Technology：
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- Access Time：
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- Conditions sélectionnées:
Découvrez les produits 73
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Technology | Access Time | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Technology | Access Time | Write Cycle Time - Word, Page | |
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Alliance Memory，Inc. |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
512M - C DIE NEW 16M X 32 3.3V 1
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | SDRAM | 17ns | 15ns | ||
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|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 2.3 V ~ 3 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
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|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 2.3 V ~ 3 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
Alliance Memory，Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
512M - C DIE NEW 16M X 32 3.3V 1
|
Tape & Reel (TR) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | SDRAM | 17ns | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC DRAM 512M PARALLEL 86TSOP II
|
Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | SDRAM | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 2.3 V ~ 3 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM - Mobile | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 108 MPQ: 1
|
IC DRAM 512M PARALLEL 86TSOP II
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | SDRAM | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | SDRAM | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC DRAM 512M PARALLEL 86TSOP II
|
Tape & Reel (TR) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | SDRAM | 6ns | - |
