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- Operating Temperature：
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- Supplier Device Package：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 259
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
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|
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Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
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|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
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|
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Winbond Electronics |
2,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
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|
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ISSI，Integrated Silicon Solution Inc |
219
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 86TSOP II
|
Tube | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | Surface Mount | SDRAM | 143MHz | 5.4ns | - | ||
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|
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ISSI，Integrated Silicon Solution Inc |
208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | Surface Mount | SDRAM | 167MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.5ns | 12ns | ||
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|
|
Alliance Memory，Inc. |
324
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90FBGA
|
Tray | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TJ) | 90-VFBGA | 90-FBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
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|
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Micron Technology Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
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|
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Micron Technology Inc. |
3,890
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
3,890
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Winbond Electronics |
156
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 134-VFBGA | 134-VFBGA (10x11.5) | Surface Mount | SDRAM - Mobile LPDDR2 | 400MHz | - | 15ns | ||
|
|
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Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 90-VFBGA (8x13) | Surface Mount | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Alliance Memory，Inc. |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
512M - C DIE NEW 16M X 32 3.3V 1
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | Surface Mount | SDRAM | 133MHz | 17ns | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 90-TFBGA | 90-TFBGA (8x13) | Surface Mount | SDRAM | 143MHz | 5.4ns | - |
