Mémoire - Zui Ai Technology（Taiwan）Company.

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT48LC8M16A2P-6A IT:L TR	Micron Technology Inc.	3,565	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A XIT:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2TG-6A:LTR	Alliance Memory，Inc.	1,087	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	W947D6HBHX5E TR	Winbond Electronics	1,945	3 jours	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	60-TFBGA	60-VFBGA (8x9)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	MT48LC8M16A2P-6A:L TR	Micron Technology Inc.	1,881	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2B4-6A XIT:L TR	Micron Technology Inc.	856	3 jours	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-VFBGA	54-VFBGA (8x8)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT45W8MW16BGX-708 WT TR	Micron Technology Inc.	Enquête	-	-	IC PSRAM 128M PARALLEL 54VFBGA MOQ: 1 MPQ: 1	IC PSRAM 128M PARALLEL 54VFBGA	-	1.7 V ~ 1.95 V	-30°C ~ 85°C (TC)	54-VFBGA	54-VFBGA (8x10)	Volatile	PSRAM (Pseudo SRAM)	PSRAM	80MHz	70ns	70ns
	MT46V8M16TG-6T IT:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	167MHz	700ps	15ns
	MT46V8M16TG-6T L:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	167MHz	700ps	15ns
	MT46V8M16TG-6T:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	167MHz	700ps	15ns
	MT48H8M16LFB4-8 IT TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	54-VFBGA	54-VFBGA (8x8)	Volatile	SDRAM - Mobile LPSDR	DRAM	125MHz	7ns	15ns
	MT48H8M16LFB4-8 TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54VFBGA	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	54-VFBGA	54-VFBGA (8x8)	Volatile	SDRAM - Mobile LPSDR	DRAM	125MHz	7ns	15ns
	MT48LC8M16A2P-75 IT:G TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	133MHz	5.4ns	15ns
	MT48LC8M16A2P-7E:G TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	133MHz	5.4ns	14ns
	MT48LC8M16A2TG-75 IT:G TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	133MHz	5.4ns	15ns
	MT48LC8M16A2TG-7E:G TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	133MHz	5.4ns	14ns
	MT46V8M16P-6T L:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	167MHz	700ps	15ns
	MT46V8M16P-6T:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	167MHz	700ps	15ns
	MT46V8M16P-75:D TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 66TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 66TSOP	-	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP	Volatile	SDRAM - DDR	DRAM	133MHz	750ps	15ns
	MT48LC8M16A2P-75:G TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	133MHz	5.4ns	15ns

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