Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	AS4C8M16SA-7TCN	Alliance Memory，Inc.	7,498	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16800F-7TLI	ISSI，Integrated Silicon Solution Inc	659	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C8M16SA-6TIN	Alliance Memory，Inc.	5,799	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	W9812G6KH-6	Winbond Electronics	3,538	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	166MHz	5ns	-
	AS4C8M16SA-6TCN	Alliance Memory，Inc.	354	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	IS42S16800F-7TL	ISSI，Integrated Silicon Solution Inc	1,639	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C8M16SA-6TAN	Alliance Memory，Inc.	266	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	AS4C8M16SA-7BCN	Alliance Memory，Inc.	631	3 jours	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TFBGA	54-TFBGA (8x8)	Surface Mount	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	AS4C8M16SA-6BIN	Alliance Memory，Inc.	436	3 jours	-	IC DRAM 128M PARALLEL 54TFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TFBGA	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x8)	Surface Mount	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	W947D6HBHX5E	Winbond Electronics	245	3 jours	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	60-TFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	W947D6HBHX5I	Winbond Electronics	212	3 jours	-	IC DRAM 128M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-TFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	15ns
	AS4C8M16MSA-6BIN	Alliance Memory，Inc.	234	3 jours	-	IC DRAM 128M PARALLEL 54FBGA MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54FBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	54-VFBGA	54-FBGA (8x8)	Surface Mount	Volatile	SDRAM - Mobile	DRAM	166MHz	5ns	-
	MT48LC8M16A2P-6A IT:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A IT:L TR	Micron Technology Inc.	3,565	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A IT:L TR	Micron Technology Inc.	3,565	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A XIT:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A XIT:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2P-6A XIT:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2TG-6A:LTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC8M16A2TG-6A:LTR	Alliance Memory，Inc.	1,087	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Surface Mount	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns

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