Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	6,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	167MHz	5.4ns	12ns
	AS4C16M16SA-7TCN	Alliance Memory，Inc.	1,545	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	143MHz	5.4ns	14ns
	IS42S16160J-7TLI	ISSI，Integrated Silicon Solution Inc	1,143	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	143MHz	5.4ns	-
	IS42S16160G-7TLI	ISSI，Integrated Silicon Solution Inc	3,765	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	143MHz	5.4ns	-
	AS4C16M16SA-6TIN	Alliance Memory，Inc.	2,280	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	166MHz	5ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,464	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,464	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	W9825G6KH-6	Winbond Electronics	1,420	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	166MHz	5ns	-
	AS4C16M16SA-6TCN	Alliance Memory，Inc.	436	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	166MHz	5ns	12ns
	MT48LC16M16A2P-6A AAT:G TR	Micron Technology Inc.	1,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A AAT:G TR	Micron Technology Inc.	1,953	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A AAT:G TR	Micron Technology Inc.	1,953	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A:GTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A:GTR	Alliance Memory，Inc.	761	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A:GTR	Alliance Memory，Inc.	761	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	167MHz	5.4ns	12ns
	AS4C16M16SA-6TAN	Alliance Memory，Inc.	7	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	SDRAM	166MHz	5ns	12ns
	W9825G6KH-5 TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	200MHz	5ns	-