Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS42S16400J-7TLI	ISSI，Integrated Silicon Solution Inc	2,638	3 jours	-	IC DRAM 64M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	64Mb (4M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	6,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2TG-6A IT:GTR	Alliance Memory，Inc.	7,449	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	AS4C8M16SA-7TCN	Alliance Memory，Inc.	7,498	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (8M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16800F-7TLI	ISSI，Integrated Silicon Solution Inc	659	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (8M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C8M16SA-6TIN	Alliance Memory，Inc.	5,799	3 jours	-	IC DRAM 128M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (8M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	AS4C16M16SA-7TCN	Alliance Memory，Inc.	1,545	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16160J-7TLI	ISSI，Integrated Silicon Solution Inc	1,143	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	IS42S16160G-7TLI	ISSI，Integrated Silicon Solution Inc	3,765	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C16M16SA-6TIN	Alliance Memory，Inc.	2,280	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	166MHz	5ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,000	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,464	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	Cut Tape (CT)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC16M16A2P-6A:G TR	Micron Technology Inc.	16,464	3 jours	-	IC DRAM 256M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 54TSOP	-	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (16M x 16)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	AS4C32M16SB-7TCN	Alliance Memory，Inc.	1,405	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (32M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	MT48LC64M8A2P-75:C	Alliance Memory，Inc.	1,226	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (64M x 8)	Volatile	SDRAM	DRAM	133MHz	5.4ns	15ns
	IS42S16320D-7TL	ISSI，Integrated Silicon Solution Inc	915	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (32M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C32M16SB-7TIN	Alliance Memory，Inc.	1,138	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (32M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16320F-7TLI	ISSI，Integrated Silicon Solution Inc	461	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (32M x 16)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	MT48LC64M8A2TG-75:IT:C	Alliance Memory，Inc.	863	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (64M x 8)	Volatile	SDRAM	DRAM	133MHz	5.4ns	15ns

Envoyé avec succès!