- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Clock Frequency:
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- Access Time:
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- Conditions sélectionnées:
Découvrez les produits 65
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | ||
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Micron Technology Inc. |
2,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | Automotive,AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Micron Technology Inc. |
2,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | Automotive,AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Micron Technology Inc. |
1,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 133MHz | 5.4ns | 14ns | ||||
Alliance Memory,Inc. |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54FBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-FBGA (8x8) | SDRAM - Mobile SDRAM | DRAM | 166MHz | 5.5ns | - | ||||
Micron Technology Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Micron Technology Inc. |
1,924
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Micron Technology Inc. |
1,924
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||||
Alliance Memory,Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54FBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-FBGA (8x8) | SDRAM - Mobile SDRAM | DRAM | 166MHz | 5.5ns | - | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC PSRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 54-VFBGA (6x8) | PSRAM (Pseudo SRAM) | PSRAM | 133MHz | 70ns | - | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC PSRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 54-VFBGA (6x8) | PSRAM (Pseudo SRAM) | PSRAM | 133MHz | 70ns | - | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x14) | SDRAM | DRAM | 133MHz | 5.4ns | 15ns |