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- Voltage - Supply：
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- Memory Size：
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- Conditions sélectionnées:
Découvrez les produits 340
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
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|
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Micron Technology Inc. |
2,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
|
Micron Technology Inc. |
2,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | Automotive，AEC-Q100 | 3 V ~ 3.6 V | -40°C ~ 105°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
|
Micron Technology Inc. |
1,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 133MHz | 5.4ns | 14ns | ||
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|
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Alliance Memory，Inc. |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54FBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-FBGA (8x8) | 128Mb (8M x 16) | SDRAM - Mobile | DRAM | 166MHz | 5ns | - | ||
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|
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Alliance Memory，Inc. |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54FBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-FBGA (8x8) | 256Mb (16M x 16) | SDRAM - Mobile SDRAM | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
Alliance Memory，Inc. |
255
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 54FBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TJ) | 54-FBGA (8x8) | 512Mb (32M x 16) | SDRAM - Mobile SDRAM | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
Micron Technology Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
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Micron Technology Inc. |
1,924
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
|
Micron Technology Inc. |
1,924
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 256Mb (16M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
|
Micron Technology Inc. |
856
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54VFBGA
|
Cut Tape (CT) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
|
|
|
Micron Technology Inc. |
856
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 128M PARALLEL 54VFBGA
|
- | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-VFBGA (8x8) | 128Mb (8M x 16) | SDRAM | DRAM | 167MHz | 5.4ns | 12ns | ||
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PSRAM 32M PARALLEL 54VFBGA
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Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-VFBGA (6x8) | 32Mb (2M x 16) | PSRAM (Pseudo SRAM) | PSRAM | - | 70ns | 70ns | ||
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|
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Alliance Memory，Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 54FBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-FBGA (8x8) | 128Mb (8M x 16) | SDRAM - Mobile | DRAM | 166MHz | 5ns | - | ||
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|
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Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC PSRAM 64M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 54-VFBGA (6x8) | 64Mb (4M x 16) | PSRAM (Pseudo SRAM) | PSRAM | 133MHz | 70ns | - | ||
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|
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Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC PSRAM 64M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 54-VFBGA (6x8) | 64Mb (4M x 16) | PSRAM (Pseudo SRAM) | PSRAM | 133MHz | 70ns | - | ||
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|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 480 MPQ: 1
|
IC PSRAM 32M PARALLEL 54VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-VFBGA (6x8) | 32Mb (2M x 16) | PSRAM (Pseudo SRAM) | PSRAM | - | 70ns | 70ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC PSRAM 32M PARALLEL 54BGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 54-VFBGA (6x8) | 32Mb (2M x 16) | PSRAM (Pseudo SRAM) | PSRAM | - | 70ns | 70ns | ||
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|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC PSRAM 128M PARALLEL 54VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 54-VFBGA (6x8) | 128Mb (8M x 16) | PSRAM (Pseudo SRAM) | PSRAM | 133MHz | 70ns | - |
