Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS42S32160F-6BLI	ISSI，Integrated Silicon Solution Inc	208	3 jours	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	167MHz	5.4ns	-
	IS43LR32160B-6BLI	ISSI，Integrated Silicon Solution Inc	234	3 jours	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS42S32160F-7BLI	ISSI，Integrated Silicon Solution Inc	95	3 jours	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	143MHz	5.4ns	-
	IS43LR32160C-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS43LR32160C-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS43LR32160C-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS43LR32160B-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS43LR32160C-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS42VM32160E-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42SM32160E-75BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS43LR32160B-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS42VM32160E-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
	IS42RM32160E-75BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	2.3 V ~ 3 V	0°C ~ 70°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS43LR32160B-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS42SM32160E-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42VM32160E-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS46LR32160C-6BLA1-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	12ns
	IS42SM32160E-75BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42VM32160D-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42VM32160E-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90TFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-