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Découvrez les produits 182
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Access Time | Write Cycle Time - Word, Page | |
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Microchip Technology |
Enquête
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- |
-
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MOQ: 26 MPQ: 1
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IC EEPROM 1M PARALLEL 32SOIC
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Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | 32-SOIC (0.295"，7.50mm Width) | 1Mb (128K x 8) | Non-Volatile | EEPROM | EEPROM | 200ns | 10ms | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 450 MPQ: 1
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IC SRAM 4M PARALLEL 32SOIC
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Tube | MoBL | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 4Mb (512K x 8) | Volatile | SRAM - Asynchronous | SRAM | 70ns | 70ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 450 MPQ: 1
|
IC SRAM 4M PARALLEL 32SOIC
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Tube | MoBL | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 4Mb (512K x 8) | Volatile | SRAM - Asynchronous | SRAM | 45ns | 45ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOIC
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Tube | MoBL | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 1Mb (128K x 8) | Volatile | SRAM - Asynchronous | SRAM | 45ns | 45ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC SRAM 2M PARALLEL 32SOIC
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Tape & Reel (TR) | MoBL | 2.2 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 2Mb (256K x 8) | Volatile | SRAM - Asynchronous | SRAM | 45ns | 45ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
|
IC SRAM 4M PARALLEL 32SOIC
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Tube | MoBL | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 4Mb (512K x 8) | Volatile | SRAM - Asynchronous | SRAM | 55ns | 55ns | |||
|
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC SRAM 4M PARALLEL 32SOIC
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Tape & Reel (TR) | MoBL | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 4Mb (512K x 8) | Volatile | SRAM - Asynchronous | SRAM | 55ns | 55ns | |||
|
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOIC
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Tube | MoBL | 2.2 V ~ 3.6 V | -40°C ~ 125°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 1Mb (128K x 8) | Volatile | SRAM - Asynchronous | SRAM | 55ns | 55ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOIC
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Tape & Reel (TR) | MoBL | 2.2 V ~ 3.6 V | -40°C ~ 125°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 1Mb (128K x 8) | Volatile | SRAM - Asynchronous | SRAM | 55ns | 55ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 216 MPQ: 1
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IC RAM 1M PARALLEL 32SOIC
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Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 1Mb (128K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 216 MPQ: 1
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IC RAM 256K PARALLEL 32SOIC
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Tray | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
|
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC RAM 1M PARALLEL 32SOIC
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Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 1Mb (128K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
|
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 216 MPQ: 1
|
IC RAM 1M PARALLEL 32SOIC
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Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 1Mb (128K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
|
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 216 MPQ: 1
|
IC RAM 256K PARALLEL 32SOIC
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Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC RAM 256K PARALLEL 32SOIC
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Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 44 MPQ: 1
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IC NVSRAM 256KBIT 35NS 32SOIC
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Tube | - | 4.5 V ~ 5.5 V | -55°C ~ 125°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | 35ns | 35ns | ||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC RAM 256K PARALLEL 32SOIC
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Tape & Reel (TR) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC RAM 256K PARALLEL 32SOIC
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Cut Tape (CT) | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC RAM 256K PARALLEL 32SOIC
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- | - | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 256Kb (32K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns | |||
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Everspin Technologies Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC RAM 1M PARALLEL 32SOIC
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Tape & Reel (TR) | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-SOIC (0.295"，7.50mm Width) | 1Mb (128K x 8) | Non-Volatile | MRAM (Magnetoresistive RAM) | RAM | 35ns | 35ns |
