Découvrez les produits 6
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Memory Size Memory Type Technology Memory Format Access Time Write Cycle Time - Word, Page
CY62148G30-45SXI
Cypress Semiconductor Corp
93
3 jours
-
MOQ: 1  MPQ: 1
IC SRAM 4M PARALLEL 32SOIC
MoBL 2.2 V ~ 3.6 V -40°C ~ 85°C (TA) 32-SOIC (0.445",11.30mm Width) 4Mb (512K x 8) Volatile SRAM - Asynchronous SRAM 45ns 45ns
CY62148G-45SXI
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 125  MPQ: 1
IC SRAM 4M PARALLEL 32SOIC
MoBL 4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 32-SOIC (0.445",11.30mm Width) 4Mb (512K x 8) Volatile SRAM - Asynchronous SRAM 45ns 45ns
MR0A08BSO35
Everspin Technologies Inc.
Enquête
-
-
MOQ: 216  MPQ: 1
IC RAM 1M PARALLEL 32SOIC
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-SOIC (0.295",7.50mm Width) 1Mb (128K x 8) Non-Volatile MRAM (Magnetoresistive RAM) RAM 35ns 35ns
MR256A08BSO35
Everspin Technologies Inc.
Enquête
-
-
MOQ: 216  MPQ: 1
IC RAM 256K PARALLEL 32SOIC
- 3 V ~ 3.6 V 0°C ~ 70°C (TA) 32-SOIC (0.295",7.50mm Width) 256Kb (32K x 8) Non-Volatile MRAM (Magnetoresistive RAM) RAM 35ns 35ns
MR0A08BCSO35
Everspin Technologies Inc.
Enquête
-
-
MOQ: 216  MPQ: 1
IC RAM 1M PARALLEL 32SOIC
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 32-SOIC (0.295",7.50mm Width) 1Mb (128K x 8) Non-Volatile MRAM (Magnetoresistive RAM) RAM 35ns 35ns
MR256A08BCSO35
Everspin Technologies Inc.
Enquête
-
-
MOQ: 216  MPQ: 1
IC RAM 256K PARALLEL 32SOIC
- 3 V ~ 3.6 V -40°C ~ 85°C (TA) 32-SOIC (0.295",7.50mm Width) 256Kb (32K x 8) Non-Volatile MRAM (Magnetoresistive RAM) RAM 35ns 35ns